ME50P06

P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME50P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION ME50P06/ME50P06-G FEATURES ● RDS(ON)≦17mΩ@VGS=-10V ● RDS(ON)≦20mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View * The Ordering Information: ME50P06 (Pb-free) ME50P06-G (Green product-Halogen free ) Absolute Maximum Ratings...