Document
Production specification
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction. Complementary NPN type available
(MMST5551). Also available in lead free version.
Pb
Lead-free
MMST5401
APPLICATIONS
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMST5401
K4M
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
VCBO VCEO
collector-base voltage collector-emitter voltage
-160 -150
VEBO
emitter-base voltage
-5
IC collector current (DC)
-0.6
PC RθJA Tj ,Tstg
Collector dissipation Thermal resistance junction to ambient junction and storage temperature
0.2 625 -55 to +150
UNIT V V V A W °C/W °C
F055 Rev.A
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Production specification
PNP General Purpose Transistor
MMST5401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
V(BR)CBO Collector-base breakdown v.