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KPDE0301M51

KYOSEMI
Part Number KPDE0301M51
Manufacturer KYOSEMI
Description InGaAs Photodiode
Published Mar 20, 2018
Detailed Description InGaAs Photodiode Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option (Ceramic, Metal ...
Datasheet PDF File KPDE0301M51 PDF File

KPDE0301M51
KPDE0301M51

Overview
InGaAs Photodiode Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option (Ceramic, Metal stem, TO-CAN) Applications • Optical switches • Sensors and industrial controls KPDE0301M51 1.
Cathode 2.
Anode Unit: mm Absolute Maximum Ratings Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature Symbol VR IR IF Topr Tstg Value 20 500 50 -20 to +80 -30 to +100 Unit Note V µA mA oC Avoid dew condensation oC Avoid dew condensation Electrical and Optical Characteristics (Ta=25oC unless otherwise noted) Parameter Active diameter Sensitive wavelength Responsivity Dark current Terminal capacitance Symbol D λ R ID Ct Min...


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