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MMDT2227

NPN-PNP Silicon Multi-Chip Transistor

Description

Elektronische Bauelemente MMDT2227 NPN-PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features SOT-363 Power dissipation PCM : 0.2 W (Tamp.= 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (...

SeCoS

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