ME2N7002F1KW

ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.5V ● ESD Protection HBM 1KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-363) Top View e Ordering Information: ME2N7002F1KW (Pb-free) ME2N7002F1KW -G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation ...