N-Channel MOSFET
GENERAL DESCRIPTION
The ME2N7002W is the N-Channel logic enhancement mode power field effect transistor...
N-Channel MOSFET
GENERAL DESCRIPTION
The ME2N7002W is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-323) Top View
ME2N7002W
FEATURES
● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant
Mechanical data
● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable. ● High saturation current capability. ● High-speed switching. ● Not thermal runaway. ● The soldering temperature and time shall
not exceed 260℃ for more than 10 seconds.
PARAMETER Dr...