ME2N7002F/ME2N7002F -G
N-Channel 60V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦8Ω@VG...
