MEBSS84-G

MEBSS84/ MEBSS84-G P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION FEATURES The MEBSS84 is the P-Channel logic enhancement mode power ● RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter  Th Ord...