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MEBSS123

Part Number	MEBSS123
Manufacturer	Matsuki
Description	N-Channel MOSFET
Published	Mar 20, 2018
Detailed Description	N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement...
Datasheet	MEBSS123 PDF File

Overview

N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦6Ω@VGS=10V ● RDS(ON)≦10Ω@VGS=4.
5V ● Super high density cell design fo...

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