ME3500

N- and P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TSOP-6) Top View ME3500/ ME3500-G FEATURES ● RDS(ON) ≦35mΩ@VGS=10V (N-Ch) ● RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch) ● RDS(ON) ≦70mΩ@VGS=-10V (P-Ch) ● RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● DC/DC Converter ● Loa...