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ME35N06T-G

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N-Channel 60V (D-S) MOSFET


Description
N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION (TO-220) Top View ME35N06T/ME35N06T-G FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON...



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ME35N06T-G

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