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ME15N25F-G Dataheets PDF



Part Number ME15N25F-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel 250V (D-S) MOSFET
Datasheet ME15N25F-G DatasheetME15N25F-G Datasheet (PDF)

N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION ME15N25F/ME15N25F-G FEATURES ● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note bo.

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N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. PIN CONFIGURATION ME15N25F/ME15N25F-G FEATURES ● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Ordering Information: ME15N25F (Pb-free) ME15N25F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Symbol VDS VGS ID Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD Junction and Storage Temperature Range Thermal Resistance-Junction .


ME15N25F ME15N25F-G ME16P10


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