ME15N25-G

ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. FEATURES ● RDS(ON)≦265mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View * The Ordering Information: ME15N25 (Pb-free) ME15N25-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperatu...