ME1303S

P-Channel 20V (D-S) MOSFET Preliminary-ME1303S/ME1303S-G GENERAL DESCRIPTION The ME1303S is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦95mΩ@VGS=-4.5V ● RDS(ON) ≦120mΩ@VGS=-2.5V ● RDS(ON) ≦180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC PIN CONFIGURATION (SOT-23) Top View * The Ordering Information: ME1303S (Pb-free) ME1303S...