P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2317D-G is the P-Channel logic enhancement mode power field effect ...
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2317D-G is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
ME2317D-G
FEATURES
● RDS(ON) ≦45mΩ@VGS=-10V ● RDS(ON) ≦53mΩ@VGS=-4.5V ● RDS(ON) ≦80mΩ@VGS=-2.5V ● Typical ESD performance 3KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
The Ordering Information ME23...