ME2312-G

N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2312/ME2312-G FEATURES ● RDS(ON)≦33mΩ@VGS=4.5V ● RDS(ON)≦40mΩ@VGS=2.5V ● RDS(ON)≦51mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC Ordering Information: ME2312 /ME2312-G(Green product-Halogen free) Absolute M...