ME2308D-G

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦60mΩ@VGS=10V ● RDS(ON)≦70mΩ@VGS=4.5V ● RDS(ON)≦100mΩ@VGS=2.5V ● ESD Protection ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC * The Ordering Information: ME2308D (Pb-free) ME2308D-G (Green pro...