ME2302

N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION The ME2302 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2302/ME2302-G FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦130mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Notebook ● Portable Equipment ● Load Switch ● DSC e Ordering Information: ME2302 (Pb-free) ME2302-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Un...