ME2301DC

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC PIN CONFIGURATION (SOT-23) Top View Ordering Information: ME2301DC (Pb-free) ME2301DC-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Sourc...