AOB414L

Rev 2: Nov. 2004 AOB414, AOB414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOB414L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,G TC=25°C G TC=100°C B ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 110 8...