HY62UF16404E

HY62UF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History 00 Initial Draft 01 Package Height Changed 1.0mm -> 0.9mm 02 Add Package Size Option (6.0mmx8.0mm) Draft Date Remark Dec.20.2001 Preliminary Mar.05.2002 Preliminary Feb.18.2003 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Feb. 03 Hynix Semiconductor HY62UF16404E Series DESCRIPTION The HY62UF16404E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16404E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantee...