FNK10N02-A

FNK10N02-A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N02-A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V (Typ1.95mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application ● Power switching application ● Load switching ● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N02 FNK10N02 DFN5*6-8L - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 20 ±12 Drain Current-Contin...