FNK03N06E

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK03N06E General Features ● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V RDS(ON) <7.5mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment Top View DFN5X6 Bottom View PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK03N06E FNK03N06E DFN5*6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Volta...