FNK10N02C
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =100A RDS(ON) <3.3m Ω @ VGS=10V
(Typ2.5mΩ)
● High density cell design for ultra low Rdson ● Fully cha...
