30V N-Channel MOSFET
General Description
The FNK3318 uses advanced trench technology with a monolithically integrated S...
30V N-Channel MOSFET
General Description
The FNK3318 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
30V 80A < 6.5mΩ < 10 mΩ
FNK3318
Top View
18 27 36 45
D
G S
V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 80 56 200 32 24 34 14 26 10 3.1 2
-55 to 150
Therm...
