FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK85N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
FNK85N06
General Features
● VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
● High density cell ...
