N-Channel Power MOSFET
FNK6A-1
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6A-1 uses advanced trench technology to provide...
Description
FNK6A-1
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6A-1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 19V,ID =6A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 19m Ω @ VGS=4.5V
D1 G1
G2
D2
S1 S2 Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● Battery protection ● Load switch ● Power management
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6A
FNK6A-1
SOT23-6L
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (...
Similar Datasheet