FNK04N03
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK04N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =40V,ID =100A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <5.1mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ●...
