FNK5410D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK5410D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 12A RDS(ON) <138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) <152mΩ @ VGS=4.5V (Typ:132mΩ)
● High density cell de...
