C2M1000170J

C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Low impedance package Separate driver source pin Ultra-low drain-gate capacitance Halogen-Free, RoHS compliant Fast intrinsic diode with low reverse recovery (Qrr) Wide creepage (~7mm) between drain and source Benefits Higher system efficiency Smooth switching waveforms Reduced cooling requirements Minimum gate ringing Increased system reliability Applications Auxiliary power supplies Switch Mode Power Supplies High-voltage capacitive loads Package VDS ID @ 25˚C RDS(on) 1700 V 5.3 A 1.0 Part Number C2M1000170J Package TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage G...