FNK06NS04E

FNK06NS04E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ) Top View 18 27 36 45 Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Top View DFN5X6 Bottom View Application ● Power switching application ● Load switch PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK06NS04E FNK06NS04E DFN5*6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100...