Document
FNK10N01
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V
(Typ1.8mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Marking and pin assignment
Schematic diagram
Top View
DFN5X6 Bottom View
Application
● Power switching application ● Load switching ● Uninterruptible power supply
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
FNK10N01
FNK10N01
DFN5*6-8L
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
20 ±12
Drain Current-Continuous
.