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FNK10N01 Dataheets PDF



Part Number FNK10N01
Manufacturers FNK
Logo FNK
Description N-Channel Enhancement Mode Power MOSFET
Datasheet FNK10N01 DatasheetFNK10N01 Datasheet (PDF)

FNK10N01 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Marking.

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FNK10N01 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Marking and pin assignment Schematic diagram Top View DFN5X6 Bottom View Application ● Power switching application ● Load switching ● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width FNK10N01 FNK10N01 DFN5*6-8L - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 20 ±12 Drain Current-Continuous .


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