N-Channel Trench Power MOSFET
General Description
The FNK6585 is N-channel MOS Field Effect Transistor designed for high...
N-Channel Trench Power MOSFET
General Description
The FNK6585 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
FNK6585
Features
● VDS=65V; ID=88A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
To-220 Top View
VDS = 65 V ID = 88A
RDS(ON) = 6.2 mΩ
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6585
FNK6585
TO-220
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power D...
