2N7002D

Chip Integration Technology Corporation 2N7002D 60V N-Channel MOSFET N-Channel MOSFET – ESD Protected Features: ● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant ● ESD Rating = 2000V HBM Applications: ● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable. ● High saturation current capability. ● High-speed switching. ● Not thermal runaway. ● The soldering temperature and time shall not exceed 260℃ for more than 10 seconds. (SOT-23) Top View GENERAL DESCRIPTION The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in...