MSU115N06G

■ Features 60V/58A RDS(ON) = 11.5mΩ (max.) @ VGS= 10V RDS(ON) = 14.5mΩ (max.) @ VGS= 4.5V Reliable and Rugged. Lead free and green device available (RoHS compliant). 100% UIS + Rg Tested ■ Application DC-DC converter. Power Load Switching Application. GDS MSU115N06G N-Channel Enhancement Mode MOSFET ■ Pin Description Top View of TO-251 D G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:2) L=0.5mH Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC Steady State Operating and Storage Temperature Range Maximum Power Dissipation Continuous Drain Current Thermal Resistance-Junction to Case(Note:3) TA = 25OC TA...