BPW76
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar ...
BPW76
Vishay Telefunken
Silicon
NPN Photo
transistor
Description
BPW76 is a high sensitive silicon
NPN epitaxial planar photo
transistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control.
Features
D D D D D D D D D
Hermetically sealed case Flat window Very wide viewing angle ϕ = ± 40° Exact central chip alignment Long range light barrier with an additional optics Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups
94 8401
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 –55...+125 260 400 150 Unit V V V mA mA mW °C °C °C K/W K/W
tp/T = 0.5, tp 10 ms Tamb 25 °C
x
x
t
x5s
Document Number 81526 Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600 1 (6)
BPW76
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle o...