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BPW76

Vishay Telefunken

Silicon NPN Phototransistor

BPW76 Vishay Telefunken Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar ...


Vishay Telefunken

BPW76

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Description
BPW76 Vishay Telefunken Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed case Flat window Very wide viewing angle ϕ = ± 40° Exact central chip alignment Long range light barrier with an additional optics Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8401 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 –55...+125 260 400 150 Unit V V V mA mA mW °C °C °C K/W K/W tp/T = 0.5, tp 10 ms Tamb 25 °C x x t x5s Document Number 81526 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (6) BPW76 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle o...




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