Silicon PIN Photodiode
BPW41N
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photodiode in...
Description
BPW41N
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p = 950 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.
Features
D D D D D D D
Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High radiant sensitivity Fast response times Small junction capacitance Plastic case with IR filter (l=950 nm) Suitable for near infrared radiation
94 8480
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55...+100 260 350 Unit V mW °C °C °C K/W
x 25 °C
t
x5s
Document Number 81522 Rev. 2, 20-May-99
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BPW41N
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee ...
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