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BPW21R
Vishay Semiconductors
Silicon Photodiode
94 8394
DESCRIPTION BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye.
FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° • Hermetically sealed package • Cathode connected to package • Flat glass window • Low dark current • High shunt resistance • High linearity • Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS • Sensor in exposure and color measuring purposes
PRODUCT SUMMARY
COMPONENT BPW21R
Ira (μA) 9
Note • Test condition see table “Basic Characteristics”
ϕ (deg) ± 50
λ0.5 (nm) 420 to 675
ORDERING INFORMATION
ORDERING CODE BPW21R
Note • MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 500 pcs, 500 pcs/bulk
PACKAGE FORM TO-5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Power dissipation Junction temperature
Tamb ≤ 50 °C
VR PV Tj
Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
t≤5s Connected with Cu wire, 0.14 mm2
Tamb Tstg Tsd RthJA
VALUE 10 300 125
- 40 to + 125 - 40 to + 125
260 250
UNIT V
mW °C °C °C °C K/W
Rev. 1.7, 23-Nov-11
1 Document Number: 81519
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BPW21R
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage Breakdown voltage Reverse dark current
Diode capacitance
Dark resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of IK Reverse light current Sensitivity Angle of half sensitivity
IF = 50 mA IR = 20 μA, E = 0 VR = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0
VR = 10 mV EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V VR = 5 V, EA = 10-2 to 105 lx
VF V(BR)
Iro CD CD RD Vo TKVo Ik TKIk Ira S ϕ
10
280 4.5 4.5
Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time
VR = 0 V, RL = 1 kΩ, λ = 660 nm VR = 0 V, RL = 1 kΩ, λ = 660 nm
λp λ0.5
tr tf
TYP. 1.0
2 1.2 400 38 450 -2 9 - 0.05 9 9 ± 50 565 420 to 675 3.1 3.0
MAX. 1.3
30
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
UNIT V V nA nF pF GΩ mV
mV/K μA %/K μA
nA/Ix deg nm nm μs μs
I ro - Reverse Dark Current (nA) Ira rel - RelativeReverse Light Current
104 103
102
VR = 5 V 101
10 20 40 60 80 100 120
94 8468
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.3
1.2
1.1
1.0
0.9
0.8 0
94 8738
20 40 60 80 100 120 Tamb - Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.7, 23-Nov-11
2 Document Number: 81519
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IK - Short Circuit Current (µA)
10 3 10 2
10 1 10 0
10-1 10-2
10-3
10-4 10-2 10-1
100
101 102 103
104 105 106
94 8476
EA - Illuminance (lx)
Fig. 3 - Short Circuit Current vs. Illuminance
1400
CD - Diode Capacitance (pF)
1200 1000
800
E=0 f = 1 MHz
600
400
200
0 0.1
94 8473
1 10 VR - Reverse Voltage (V)
100
Fig. 4 - Diode Capacitance vs. Reverse Voltage
S (λ)rel - Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2 Vλ Eye
0 350
94 8477
450 550 650
λ - Wavelength (nm)
750
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
BPW21R
Vishay Semiconductors
0° 10° 20° 30°
Srel - Relative Sensitivity ϕ - Angular Displacement
40° 1.0
0.9 50°
0.8 60°
70° 0.7
80°
0.6 0.4 0.2 94 8475
0
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.7, 23-Nov-11
3 Document Number: 81519
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com PACKAGE DIMENSIONS in mill.