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BPW21R Dataheets PDF



Part Number BPW21R
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon Photodiode
Datasheet BPW21R DatasheetBPW21R Datasheet (PDF)

www.vishay.com BPW21R Vishay Semiconductors Silicon Photodiode 94 8394 DESCRIPTION BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. The device is e.

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www.vishay.com BPW21R Vishay Semiconductors Silicon Photodiode 94 8394 DESCRIPTION BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° • Hermetically sealed package • Cathode connected to package • Flat glass window • Low dark current • High shunt resistance • High linearity • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC APPLICATIONS • Sensor in exposure and color measuring purposes PRODUCT SUMMARY COMPONENT BPW21R Ira (μA) 9 Note • Test condition see table “Basic Characteristics” ϕ (deg) ± 50 λ0.5 (nm) 420 to 675 ORDERING INFORMATION ORDERING CODE BPW21R Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 500 pcs, 500 pcs/bulk PACKAGE FORM TO-5 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Power dissipation Junction temperature Tamb ≤ 50 °C VR PV Tj Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t≤5s Connected with Cu wire, 0.14 mm2 Tamb Tstg Tsd RthJA VALUE 10 300 125 - 40 to + 125 - 40 to + 125 260 250 UNIT V mW °C °C °C °C K/W Rev. 1.7, 23-Nov-11 1 Document Number: 81519 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BPW21R Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Forward voltage Breakdown voltage Reverse dark current Diode capacitance Dark resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of IK Reverse light current Sensitivity Angle of half sensitivity IF = 50 mA IR = 20 μA, E = 0 VR = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 10 mV EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V VR = 5 V, EA = 10-2 to 105 lx VF V(BR) Iro CD CD RD Vo TKVo Ik TKIk Ira S ϕ 10 280 4.5 4.5 Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time VR = 0 V, RL = 1 kΩ, λ = 660 nm VR = 0 V, RL = 1 kΩ, λ = 660 nm λp λ0.5 tr tf TYP. 1.0 2 1.2 400 38 450 -2 9 - 0.05 9 9 ± 50 565 420 to 675 3.1 3.0 MAX. 1.3 30 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) UNIT V V nA nF pF GΩ mV mV/K μA %/K μA nA/Ix deg nm nm μs μs I ro - Reverse Dark Current (nA) Ira rel - RelativeReverse Light Current 104 103 102 VR = 5 V 101 10 20 40 60 80 100 120 94 8468 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0 94 8738 20 40 60 80 100 120 Tamb - Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.7, 23-Nov-11 2 Document Number: 81519 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IK - Short Circuit Current (µA) 10 3 10 2 10 1 10 0 10-1 10-2 10-3 10-4 10-2 10-1 100 101 102 103 104 105 106 94 8476 EA - Illuminance (lx) Fig. 3 - Short Circuit Current vs. Illuminance 1400 CD - Diode Capacitance (pF) 1200 1000 800 E=0 f = 1 MHz 600 400 200 0 0.1 94 8473 1 10 VR - Reverse Voltage (V) 100 Fig. 4 - Diode Capacitance vs. Reverse Voltage S (λ)rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 Vλ Eye 0 350 94 8477 450 550 650 λ - Wavelength (nm) 750 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength BPW21R Vishay Semiconductors 0° 10° 20° 30° Srel - Relative Sensitivity ϕ - Angular Displacement 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 94 8475 0 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement Rev. 1.7, 23-Nov-11 3 Document Number: 81519 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com PACKAGE DIMENSIONS in mill.


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