www.vishay.com
BPV11
Vishay Semiconductors
Silicon NPN Phototransistor
12785
DESCRIPTION BPV11 is a silicon NPN photo...
www.vishay.com
BPV11
Vishay Semiconductors
Silicon
NPN Photo
transistor
12785
DESCRIPTION BPV11 is a silicon
NPN photo
transistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation.
FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = ± 15° Base terminal connected Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT BPV11
Ica (mA) 10
Note Test condition see table “Basic Characteristics”
(deg) ± 15
0.1 (nm) 450 to 1080
ORDERING INFORMATION
ORDERING CODE BPV11
Note MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.5, tp 10 ms Tamb 47 °C
t 5 s, 2 mm from body Connected with Cu wire, 0.14 mm2
VCBO VCEO VEBO
IC ICM PV Tj Tamb...