IS45S16100H

IS42S16100H IS45S16100H ® Long-term Support World Class Quality 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JULY 2023 FEATURES Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and independently Dual internal bank controlled by A11 (bank select) Single 3.3V power supply LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write operations capability Burst termination by burst stop and precharge command Byte controlled by LDQM and UDQM Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC to +85oC) Automotive A2 (-40oC to +105oC) DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. Copyright © 2023 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. I...