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TC58NVG1S3EBAI4
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
Description
TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has two 2112-byte static registe...
Toshiba
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TC58NVG1S3EBAI4
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
- Toshiba
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