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TC58DVG3S0ETA00

8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

Description

TOSHIBA CONFIDENTIAL TC58DVG3S0ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device ha...

Toshiba

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TC58DVG3S0ETA00 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM - Toshiba

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