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TH58BVG2S3HBAI4
4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
Description
TH58BVG2S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG2S3HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096 blocks. The device has a 2112-byte static regi...
Toshiba
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TH58BVG2S3HBAI4
4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
- Toshiba
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