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MMDL914T1G

ON Semiconductor

High-Speed Switching Diode

MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode Features • S Prefix for Automotive and Other Applicatio...


ON Semiconductor

MMDL914T1G

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MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage Forward Current Non−Repetitive Peak Forward Surge Current 60 Hz Symbol VR IF IFSM(surge) Value 100 200 500 Unit V mA mA Repetitive Peak Forward Current (Note 2) IFRM 1.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s IFSM 36.0 18.0 6.0 3.0 0.7 A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Symbol PD RqJA Max Unit 200 mW 1.57 mW/°C °C/W 635 Junction and Storage Temperature TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the d...




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