BLY90
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Appl...
BLY90
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
Common Emitter PG = 5.0 dB at 50 W/175 MHz Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V 18 V 4.0 V 130 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.35 °C/W
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO hFE Cc fT GP ηC
TC = 25 °C
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IE = 25 mA VCE = 5.0 V VCB = 15 V VCE = 10 V VCC = 12.5 V IC = 6.0 A POUT = 50 W f = 175 MHz IC = 1.0 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
36 18 4.0 10 130 550 5.0 75 200 160
UNITS
V V --pF MHz dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
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