DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98 UHF linear power transistor
Product specification August 1986
Philips Semicon...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98 UHF linear power
transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES: diffused emitter ballasting resistors for an optimum temperature profile; gold sandwich metallization ensures excellent reliability. The
transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud.
BLW98
QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-A Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. fvision MHz 860 860 VCE V 25 25 IC mA 850 850 Th °C 70 25 dim(1) dB −60 −60 Po sync (1) W > typ. 3,5 4,4 > typ. Gp dB 6,5 7,0
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) ...