DISCRETE SEMICONDUCTORS
DATA SHEET
BLW77 HF/VHF power transistor
Product specification August 1986
Philips Semiconduct...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW77 HF/VHF power
transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The
transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
Transistors are delivered in matched hFE groups. The
transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW77
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) Note 1. At 130 W P.E.P. VCE V 28 28 IC(ZS) A 0,1 − f MHz 1,6 − 28 87,5 PL W 15 − 130 (P.E.P.) 130 Gp dB > 12 typ. 7,5 η % > 37,5(1) typ. 75 d3 dB < −30 −
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open ba...