SILICON RECTIFIER
1N646-1
FEATURES
• 1N646-1 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTIO...
Description
1N646-1
FEATURES
1N646-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current:
Operating Current: Derating Factor: Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C
150mA, TA= +150°C 2mA/°C above +25°C 6mA/°C above +150°C
300V
DESIGN DATA
Case: Hermetically sealed glass package Lead Material: Copper clad steel Lead Finish: Tin/Lead Marking: Blue body coat, Black digits. Polarity: Cathode end is banded.
DC ELECTRICAL CHARACTERISTICS
VF
Ambient (°C)
IF mA
Min Max Ambient V V (°C)
25 400 0.80 1.00 25
25
IR
VR V (dc)
300 360
Min µA
-
Max µA
0.050 50
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ VR = 4V
pF
- 20
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