Schottky Barrier Diode
Features:
• Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast...
Schottky Barrier Diode
Features:
Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Low Leakage Current Three Fully Isolated
Schottky Diode Also Available in Lead Free Version
Applications:
High speed switching
Maximum Rating @ Ta = 25°C unless otherwise specified
Parameter
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage
RMS reverse voltage
Forward continuous current (Max.)
Average rectified current Non-Repetitive peak forward surge current @t ≤ 10ms Thermal resistance, junction to ambient air
Power dissipation
Junction and storage temperature
Symbol
VRRM VRWM
VR VR(RMS)
IF
IO
IFSM
RθJA
PD
Tj, Tstg
SD103ATW-7-F
40
28 350 175
1 500 200 -55 to +125
Electrical Characteristics @ Ta = 25°C unless otherwise specified
Parameter Reverse breakdown voltage Average reverse current
Symbol V(BR)R
IR
Conditions
IR = 100μA VR = 10V VR = 30V
Min. 40
Typ.
0.2 0.4
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