BLV950

DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor FEATURES Internal input and output matching for easy matching, high gain and efficiency Poly-silicon emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base station transmitters in the 800 to 960 MHz range. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors. PINNING - SOT262A2 PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e BLV950 DESCRIPTION collector 1 collector 2 base 1 base 2 common emitter; connected to flange handbook, halfpage c1 1 2 b1 e 5 3 Top view 5 4 b2 MAM031 c2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 960 900 960 VCE (V) 26 26 26 26 PL (W) 150 150 150 (PEP) 150 (PEP) Gp (dB) ≥8 ≥7.5 ≥8.5 ≥8 ηC (%) ≥45 ≥45 ≥35 ≥35 d3 (dBc) − − ≤−30 ≤−30 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that ...